 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MMBT2907, MMBT2907A PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Version 2004-05-04 Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM Tj TS Grenzwerte (TA = 25C) MMBT2907 40 V 60 V 5V 250 mW 1) 600 mA 800 mA 150C - 65...+ 150C MMBT2907A 60 V Characteristics (Tj = 25C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 50 V MMBT2709 MMBT2709A - ICB0 - ICB0 - ICB0 - VCEsat - VCEsat - VBEsat - VBEsat - - - - - - - Kennwerte (Tj = 25C) Typ. - - - - - - - Max. 20 nA 10 nA 20 A 400 mV 1.6 V 1.3 V 2.6 V IE = 0, - VCB = 50 V, Tj = 150C - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector saturation volt. - Kollektor-Sattigungsspg. 1) Base saturation voltage - Basis-Sattigungsspannung 1) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 24 Switching Transistors MMBT2907, MMBT2907A Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) - VCE = 10 V, - IC = 0.1 mA - VCE = 10 V, - IC = 1 mA - VCE = 10 V, - IC = 10 mA - VCE = 10 V, - IC = 500 mA - VCE = 10 V, - IC = 150 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 20 V, - IC = 50 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz - VEB = 2 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 10 V, - IC = 100 A, RS = 1 k, f = 10 Hz...15.7 kHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time - VCC = 30 V, - VBE = 1.5 V - IC = 150 mA, - IB1 = 15 mA - VCC = 30 V, - IC = 150 mA - IB1 = - IB2 =15 mA ton td tr toff ts tf - - - - - - RthA F - fT CCB0 CEB0 200 MHz - - MMBT2709 MMBT2709A MMBT2709 MMBT2709A MMBT2709 MMBT2709A MMBT2709 MMBT2709A hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 75 50 100 75 100 30 50 100 1 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - - - Max. - - - - - - - - 300 - 8 pF 30 pF Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat 4 dB - - - - - - - 45 ns 10 ns 40 ns 100 ns 80 ns 30 ns 420 K/W 2) Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren MMBT2222, MMBT2222A Marking - Stempelung MMBT2907A = 2F MMBT2907 = (M)2B 1 2 ) Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 25 |
Price & Availability of MMBT2907
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |